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| SMD Type NPN Silicon Epitaxial Transistor 2SC4226 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features Low noise and high gain. NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz High gain. |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector +0.1 0.38-0.1 0-0.1 1 Emitter 2Base Base 2 3 3Collector Collecotr 1 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 20 12 3.0 100 150 150 -65 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Insertion power gain Noise figure Reverse transfer capacitance Transition frequency *. Pulse measurement: PW 350 s, Duty Cycle Symbol ICBO IEBO hFE S21e NF Cre fT 2%. 2 Testconditons VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 3V, IC = 7 mA VCE = 3V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz VCB = 3 V, IE = 0 , f = 1 MHz VCE =3V, IC = 7 mA Min Typ Max 1.0 1.0 Unit A A 40 7 110 9 1.2 0.7 250 dB 2.5 1.5 dB pF GHz 3.0 4.5 hFE Classification Marking Rank hFE R23 R23 40 80 R24 R24 70 140 R25 R25 125 250 www.kexin.com.cn www.kesenes.com 1 |
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